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Material Engineering

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Course Description
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Growth Aspects of Semiconductor

Department: 
Material Engineering
Course Code: 
661437
Credit Hours: 
3
Prerequests: 
Fluid and Thermal Sciences
Course Category: 
Department Requirement

Semiconductor surfaces and structures, aspects of epitaxy in growth of low dimensional III-V and Si based semiconductor materials, in-situ characterisation techniques and monitoring epitaxial growth by molecular beam epitaxy: structural, kinematic theory of LEED and application of RHEED, surface topography, composition and growth modes probed by STM, XPS and Auger spectroscopy, layer by layer, layer-island and island growth, problems of sensitivity and selectivity in the study of surfaces and interfaces.

 

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