Semiconductor surfaces and structures, aspects of epitaxy in growth of low dimensional III-V and Si based semiconductor materials, in-situ characterisation techniques and monitoring epitaxial growth by molecular beam epitaxy: structural, kinematic theory of LEED and application of RHEED, surface topography, composition and growth modes probed by STM, XPS and Auger spectroscopy, layer by layer, layer-island and island growth, problems of sensitivity and selectivity in the study of surfaces and interfaces.